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 RB081L-20
Diodes
Schottky barrier diode
RB081L-20
Applications General rectification External dimensions (Unit : mm) Land size figure (Unit : mm)
2.0
2.60.2
0.10.02 0.1
5.00.3
3
9
4.50.2
Features 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 3) High reliability.
2.0
1.20.3
PMDS
1.50.2
2.00.2
Structure
Construction Silicon epitaxial planar
ROHM : PMDS JEDEC : SOD-106 Manufacuture Date
Taping specifications(Unit : mm)
2.00.05 4.00.1 1.550.05 1.750.1 0.3
5.50.05
1.55 2.90.1 4.00.1 2.8MAX
Absolute maximum ratings (Ta=25C) Parameter
Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current (*1) Io Forward current surge peak 60Hz1cyc IFSM Junction temperature Tj Storage temperature Tstg (*1) Mounted on epoxy board. 180Harf sine wave
Limits 25 20 5 70 125 -40 to +125
Electrical characteristics (Ta=25C)
Parameter Forward voltage Reverse current
Symbol VF IR
Min. -
Typ. -
Max. 0.45 700
Unit V A
Conditions IF=0.5A VR=20V
5.30.1 0.0 5 9.50.1
Unit V V A A
120.2
4.2
Rev.B
1/3
RB081L-20
Diodes
Electrical characteristic curves (Ta=25C)
10 Ta=75 1000000 100000 10000 1000 100 10 1 0 200 400 600 0 5 10 15 20 25 30 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS Ta=25 Ta=125 Ta=75 1000 f=1MHz
FORWARD CURRENT:IF(A)
Ta=25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1 Ta=125
REVERSE CURRENT:IR(uA)
100
0.1
Ta=-25
0.01
Ta=-25
10
0.001
1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
400
1000 Ta=25 IF=5A n=30pcs 900 Ta=25 VR=20V n=30pcs
950 940 Ta=25 f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
390
800 700 600 500 400 300 200 100 0 AVE:201.3uA
930 920 910 900 890 880 870 860 850 AVE:898.1pF
380
370
360 AVE:380.3mV 350 VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
30 Ifsm 1cyc 8.3ms
300
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150 100 50
25 20 15 10 AVE:11.7ns 5 0
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
250 200 150 100 50 0 1
Ifsm 8.3ms 8.3ms 1cyc
AVE:196.0A 0 IFSM DISRESION MAP
trr DISPERSION MAP
10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
300
1000
5 Mounted on epoxy board Rth(j-a) 4
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150 100 50 0 1
Ifsm t
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
FORWARD POWER DISSIPATION:Pf(W)
100 Rth(j-c) 10
IM=100mA IF=1A
D=1/2 3 Sin(180) 2 1 0 DC
1
1ms
time
300us
10 TIME:t(ms) IFSM-t CHARACTERISTICS
100
0.1 0.001
10 TIME:t(s) Rth-t CHARACTERISTICS
0.1
1000
0
2 4 6 8 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
10
Rev.B
2/3
RB081L-20
Diodes
2 10 9 10 0A 0V t T DC D=1/2 Sin(180) Io 9 VR D=t/T VR=10V Tj=125 DC 0A 0V t D=1/2 T
Io VR D=t/T VR=10V Tj=125
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
1.5
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
8 7 6 5 4 3 2 1 0
8 7 6 5 4 3 2 1 0 Sin(180)
REVERSE POWER DISSIPATION:PR (W)
Sin(180) 1 DC D=1/2 0.5
-
0 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
0
25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
125
0
25
50
75
100
125
CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
30 No break at 30kV 25
ELECTROSTATIC DISCHARGE TEST ESD(KV)
20 15 10 5 0
AVE:24.8kV
C=200pF R=0
C=100pF R=1.5k
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


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